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| BUK6213-30A TrenchMOSTM Intermediate level FET M3D300 Rev. 02 -- 22 September 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOSTM technology. 1.2 Features s Low on-state resistance s 175 C rated s Q101 compliant s Intermediate level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S 267 mJ s ID 55 A s RDSon = 10 m (typ) s Ptot 102 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d mb g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the package. Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 3. Ordering information Table 2: Ordering information Package Name BUK6213-30A Description Plastic single-ended surface mounted package Version SOT428 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 55 A; VDS 30 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 C [1] [2] [1] [2] [1] Conditions RGS = 20 k Min -55 -55 - Max 30 30 20 64 55 45 257 102 +175 +175 64 55 257 267 Unit V V V A A A A W C C A A A mJ Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Source-drain diode Avalanche ruggedness [1] [2] Current is limited by power dissipation chip rating Continuous current is limited by bondwires. 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 2 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 120 Pder (%) 03na19 80 ID (A) 60 03nk64 Capped at 55 A due to bondwires 80 40 40 20 0 0 50 100 150 200 Tmb (C) 0 0 50 100 150 Tmb (C) 200 P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 10 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 03nk62 ID (A) Limit RDSon = VDS/ID tp = 10 s 102 100 s 1 ms Capped at 55 A due to bondwires 10 DC 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 3 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 5. Thermal characteristics Table 4: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Figure 4 Conditions Min Typ 71.4 Max 1.4 Unit K/W K/W 5.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 1 = 0.5 0.2 0.1 03nk63 10-1 0.05 0.02 10-2 P single shot = tp T tp 10-3 10-6 T 10-5 10-4 10-3 10-2 10-1 tp (s) t 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 4 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 6. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 30 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 10 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS = 4.5 V; ID = 10 A Dynamic characteristics Qg(tot) Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls total gate charge total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance measured from drain to center of die measured from source lead to source bond pad VDS = 25 V; RL = 1.2 ; VGS = 10 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VGS = 10 V; VDS = 24 V; ID = 25 A; Figure 14 VGS = 5 V; VDS = 24 V; ID = 25 A; Figure 14 44 26 7 14 1490 505 325 12 95 75 105 2.5 7.5 1986 606 445 nC nC nC nC pF pF pF nS nS nS nS nH nH 10 15 13 25 20 m m m 0.05 2 10 500 100 A A nA 1 0.5 1.8 3 3.5 V V V 30 27 V V Min Typ Max Unit Static characteristics 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 5 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET Table 5: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol VSD trr Qr Parameter source-drain (diode forward) voltage reverse recovery time recovered charge Conditions IS = 15 A; VGS = 0 V; Figure 15 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 25 V Min Typ 0.85 49 27 Max 1.2 Unit V ns nC Source-drain diode 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 6 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 200 ID (A) 150 03nk59 20 14 12 30 RDSon (m) 25 03nk58 10 9 8 7.5 7 6.5 Label is VGS (V) 20 100 6 5.5 5 15 50 4.5 10 4 3.5 3 0 2 4 6 8 10 VDS (V) 0 5 0 5 10 15 VGS (V) 20 Tj = 25 C; tp = 300 s Tj = 25 C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 30 RDSon (m) 20 03nk60 2 a 1.5 03aa27 label is VGS (V) 5 4.5 4 3.5 10 1 20 10 0.5 0 0 50 100 150 ID (A) 200 0 -60 0 60 120 Tj (C) 180 Tj = 25 C; tp = 300 s R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 7 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 4 VGS(th) (V) 3 max 03nk65 10-1 ID (A) 10-2 min 10-3 typ max 03nk66 2 typ 10-4 1 min 10-5 0 -60 0 60 120 Tj (C) 180 10-6 0 1 2 3 VGS (V) 4 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 40 gfs (S) 30 03nk56 3000 C (pF) 2000 Ciss 03nk61 20 Coss 1000 10 Crss 0 0 10 20 30 ID (A) 40 0 10-1 1 10 VDS (V) 102 Tj = 25 C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 8 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 50 ID (A) 40 03nk57 10 VGS (V) 8 03nk55 30 6 VDD = 14 V VDD = 24 V 20 4 10 Tj = 175 C 0 0 1 2 3 4 VGS (V) 5 Tj = 25 C 2 0 0 10 20 30 40 50 QG (nC) VDS = 25 V Tj = 25 C; ID = 25 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 100 IS (A) 75 03nk54 50 25 Tj = 175 C Tj = 25 C 0 0.0 0.4 0.7 1.1 VSD (V) 1.4 VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 9 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 7. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 E1 D1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1(1) 0.65 0.45 A2 0.93 0.73 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.26 c 0.4 0.2 D 6.22 5.98 D1 min. 4.0 E 6.73 6.47 E1 e e1 HE 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.9 0.5 w 0.2 y max. 0.2 4.81 2.285 4.57 4.45 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 16. SOT428 (D-PAK). 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 10 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 8. Revision history Table 6: Rev Date 02 20030922 Revision history CPCN Description Product data (9397 750 12028) Modifications: * 01 20030825 - Correction made to descriptive and alternative title. Text changed from `TrenchMOSTM Logic level FET' to `TrenchMOSTM Intermediate level FET'. Product data (9397 750 11752) 9397 750 12028 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 11 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET 9. Data sheet status Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 12. Trademarks TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 12028 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 -- 22 September 2003 12 of 13 Philips Semiconductors BUK6213-30A TrenchMOSTM Intermediate level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 (c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 September 2003 Document order number: 9397 750 12028 |
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